View STD26P3LLH6_8903086.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. february 2014 docid023574 rev 5 1/16 STD26P3LLH6 p-channel 30 v, 0.024 typ., 12 a, stripfet? vi deepgate? power mosfet in a dpak package datasheet - production data figure 1. internal schematic diagram features ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate input resistance applications ? switching applications ? lcc converters, resonant converters description this device is a p-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages note: for the p-channel power mosfets the actual polarity of the voltages and the current must be reversed. 1 3 tab 2 dpak d(2 or tab) g(1) s(3) am11258v1 order code v dss r ds(on) max i d p tot STD26P3LLH6 30 v 0.030 (1) 1. @ v gs = 10 v 12 a 40 w table 1. device summary order code marking package packaging STD26P3LLH6 26p3llh6 dpak tape and reel www.st.com
contents STD26P3LLH6 2/16 docid023574 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid023574 rev 5 3/16 STD26P3LLH6 electrical ratings 16 1 electrical ratings note: for the p-channel power mosfets the actual polarity of the voltages and the current must be reversed. table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d (1) 1. limited by wire bonding. drain current (continuous) at t c = 25 c 12 a i d (1) drain current (continuous) at t c = 100 c 8.5 a i dm (1)(2) 2. pulse width limited by safe operating area. drain current (pulsed) 48 a p tot (1) total dissipation at t c = 25 c 40 w t stg storage temperature -55 to 175 c t j max. operating junction temperature 175 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 3.75 c/w table 4. avalanche characteristics symbol parameter value unit e as single pulse avalanche energy (starting t j =25 c, i d =6 a, i as =12 a, v dd =25 v, v gs =10 v) 350 mj
electrical characteristics STD26P3LLH6 4/16 docid023574 rev 5 2 electrical characteristics (t case = 25 c unless otherwise specified) note: for the p-channel power mosfets the actual polarity of the voltages and the current must be reversed. table 5. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v 1 a v ds = 30 v, tc = 125 c 10 a i gss gate body leakage current v gs = 20 v, (v ds = 0) 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a1 2.5v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 6 a 0.024 0.03 v gs = 4.5 v, i d = 6 a 0.038 0.045 table 6. dynamic symbol parameter test conditions min typ. max. unit c iss input capacitance v ds = 25 v, f=1 mhz, v gs = 0 - 1450 - pf c oss output capacitance - 178 - pf c rss reverse transfer capacitance -120-pf q g total gate charge v dd = 24 v, i d = 12 a v gs = 4.5 v (see figure 14 ) -12-nc q gs gate-source charge - 4.4 - nc q gd gate-drain charge - 5 - nc r g gate input resistance f = 1 mhz, gate dc bias = 0, test signal level = 20 mv, i d = 0 -1.8 -
docid023574 rev 5 5/16 STD26P3LLH6 electrical characteristics 16 note: for the p-channel power mosfets the actual polarity of the voltages and the current must be reversed. table 7. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 24 v, i d = 1.5 a, r g = 4.7 , v gs = 10 v (see figure 13 ) -15 - ns t r rise time - 15 - ns t d(off) turn-off delay time - 24 - ns t f fall time - 21 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 12 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 48 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 12 a, di/dt = 100 a/ s, v dd = 16 v (see figure 15 ) -15 ns q rr reverse recovery charge - 6.5 nc i rrm reverse recovery current - 0.9 a
electrical characteristics STD26P3LLH6 6/16 docid023574 rev 5 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100 s 1ms 10ms tj=175c tc = 2 5 c single pulse am15963v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 30 20 10 0 0 0.4 v ds (v) 0.8 (a) 0.2 0.6 1 3v 4v 1.2 25 15 5 5v 6v 7v 8v 9v 10v 35 am15964v1 i d 30 20 10 0 0 4 v gs (v) 8 (a) 2 6 5 15 25 35 v ds =1v am15965v1 v gs 6 4 2 0 0 4 q g (nc) (v) 16 8 8 12 10 12 20 24 28 am15966v1 r ds(on) 30.0 20.0 10.0 0.0 0 8 i d (a) ( m ) 4 v gs =10v 2 6 10 40.0 am15967v1
docid023574 rev 5 7/16 STD26P3LLH6 electrical characteristics 16 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v ds vs temperature figure 12. source-drain diode forward characteristics c 600 400 200 0 0 10 v ds (v) (pf) 5 800 15 ciss coss crss 20 25 1000 1200 1400 1600 am15968v1 v gs(th) 0.8 0.6 0.4 0.2 -55 -5 t j (c) (norm) -30 1 70 20 45 95 i d =250a 0 120 am15969v1 r ds(on) 0.8 0.6 0.2 0 -55 5 t j (c) (norm) -30 70 20 45 95 1 1.2 1.4 i d =6a 0.4 1.6 120 am15970v1 v ds t j (c) (norm) 0.94 0.96 0.98 1 1.02 1.04 1.06 1.08 i d =1ma -55 5 -30 70 20 45 95 120 am15971v1 v sd 2 6 i sd (a) (v) 4 8 10 0.6 0.7 0.8 0.9 t j =-55c t j =175c t j =25c 1 0.5 am15972v1
test circuits STD26P3LLH6 8/16 docid023574 rev 5 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for diode recovery behavior figure 16. unclamped inductive load test circuit am11255v1 am11256v1 am11257v1 v gs p w v d i d d.u.t. l 2200 f 3.3 f v dd am18080v1 figure 17. unclamped inductive waveform figure 18. switching time waveform am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid023574 rev 5 9/16 STD26P3LLH6 package mechanical data 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STD26P3LLH6 10/16 docid023574 rev 5 figure 19. dpak (to-252) type a drawing 0068772_m_type_a
docid023574 rev 5 11/16 STD26P3LLH6 package mechanical data 16 table 9. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data STD26P3LLH6 12/16 docid023574 rev 5 figure 20. dpak (to-252) type a footprint (a) a. all dimensions are in millimeters footprint_rev_m_type_a
docid023574 rev 5 13/16 STD26P3LLH6 packaging mechanical data 16 5 packaging mechanical data figure 21. tape for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
packaging mechanical data STD26P3LLH6 14/16 docid023574 rev 5 figure 22. reel for dpak (to-252) table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid023574 rev 5 15/16 STD26P3LLH6 revision history 16 6 revision history table 11. document revision history date revision changes 22-aug-2012 1 first release 31-jan-2013 2 ? modified: r ds(on) on the title, features table and table 5 ? modified: typical values on table 6 , 7 , 8 ? modified: v sd max value on table 8 ? updated: section 4: package mechanical data 16-jul-2013 3 ? modified: v gs and i d =100 c values in table 2 ? modified: r ds(on) max value in table 5 , figure 13 , 14 and 15 ? inserted: section 2.1: electrical characteristics (curves) 10-sep-2013 4 ? updated q g value in table 6: dynamic . 06-feb-2014 5 ? added: table 4: avalanche characteristics ? modified: figure 2 , 5 and 12 ? updated: section 4: package mechanical data ? added: figure 16 , 17 and 18 ? minor text changes
STD26P3LLH6 16/16 docid023574 rev 5 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STD26P3LLH6

	To Download STD26P3LLH6 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .